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  inchange semiconductor product specification silicon npn power transistors 3DD15D description with to-3 package high breakdown voltage low collector saturation voltage applications for b/w tv horizontal output and power amplifier applications pinning pin description 1 base 2 emitter 3 collector absolut maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 300 v v ceo collector-emitter voltage open base 200 v v ebo emitter-base voltage open collector 5 v i c collector current 5 a p c collector power dissipation t c =75 50 w t j junction temperature -55~175 t stg storage temperature -55~175 thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 2.0 /w fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 3DD15D characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma ; i b =0 200 v v (br)cbo collector-base breakdown voltage i c =1ma ; i e =0 300 v v (br)ebo emitter-base breakdown voltage i e =1ma ; i c =0 5 v v cesat collector-emitter saturation voltage i c =2.5a ;i b =0.25a 1.5 v i ceo collector cut-off current v ce =50v; i b =0 1.0 ma i cbo collector cut-off current v cb =150v; i e =0 0.5 ma i ebo emitter cut-off current v eb =5v; i c =0 0.5 ma h fe dc current gain i c =2a ; v ce =10v 30 250
inchange semiconductor product specification 3 silicon npn power transistors 3DD15D package outline fig.2 outline dimensions (unindicated tolerance: 0.10mm)


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